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參數(shù)資料
| 型號(hào)： | 934055880118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 14/15頁(yè) |
| 文件大?。?/td> | 329K |
| 代理商： | 934055880118 |
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Philips Semiconductors
BUK9511-55A; BUK9611-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 7 February 2001
8 of 15
9397 750 07916
Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nd73
0
20
40
60
80
100
01234
VGS (V)
ID
(A)
Tj = 175
oC
Tj = 25
oC
03nd71
0
1
2
3
4
5
0
2040
6080
QG (nC)
VGS
(V)
VDD= 44 V
VDD= 14 V
03nd70
0
20
40
60
80
100
0.0
0.5
1.0
1.5
VSD (V)
IS
(A)
Tj = 175
oC
Tj = 25
oC
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