參數(shù)資料
型號(hào): 934055881127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 47 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 86K
代理商: 934055881127
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK7528-100A
Standard level FET
BUK7628-100A
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); paramter VGS
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
0
20
40
60
80
100
120
140
160
180
02468
10
VDS/V
ID/A
5.5
6.5
9.0
10.0
VGS/V =
5.0
6.0
4.5
7.0
7.5
8.0
13.5
20.0
0
10
20
30
40
50
60
70
80
90
100
02468
VGS/V
ID/A
Tj/C= 175
oC
25
oC
0
5
10
15
20
25
30
35
40
45
0
2040
6080
100
ID/A
gfs/S
15
20
25
30
35
40
45
50
55
60
65
5
25
45
65
85
105
125
ID/A
6.5
7.5
5.5
7.0
8.0
6.0
RDS(ON)/mOhm
10.0
-100
0
100
200
0
0.5
1
1.5
2
30V TrenchMOS
Tj / C
a
150
50
-50
15
17
19
21
23
25
27
29
31
5
7
9
11
13
15
VGS/V
RDS(ON) Ohm
March 2000
4
Rev 1.000
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