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參數(shù)資料
| 型號： | 934055891115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大?。?/td> | 104K |
| 代理商： | 934055891115 |
2000 May 17
2
Philips Semiconductors
Product specication
NPN 9 GHz wideband transistor
BFR505T
FEATURES
Low current consumption
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT416 (SC-75) package.
APPLICATIONS
Low power amplifiers, oscillators and
mixers particularly in RF portable
communication equipment (cellular
phones, cordless phones and pagers)
up to 2 GHz.
DESCRIPTION
NPN transistor in a plastic SOT416
(SC-75) package.
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
fpage
12
3
MBK090
Top view
Fig.1 SOT416.
Marking code: N0.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCES
collector-emitter voltage
RBE =0
15
V
IC
DC collector current
18
mA
Ptot
total power dissipation
Ts ≤ 75 °C; note 1
150
mW
hFE
DC current gain
IC = 5 mA; VCE =6V; Tj =25 °C
60
120
250
fT
transition frequency
IC = 5 mA; VCE = 6 V; f = 1 GHz;
Tamb =25 °C
9
GHz
GUM
maximum unilateral power gain
IC = 5 mA; VCE = 6 V; f = 900 MHz;
Tamb =25 °C
17
dB
F
noise gure
IC = 1.25 mA; VCE =6V;
f = 900 MHz; Tamb =25 °C
1.2
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCE
collector-emitter voltage
RBE =0
15
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
18
mA
Ptot
total power dissipation
Ts ≤ 75 °C; note 1
150
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
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