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參數(shù)資料
| 型號： | 934055906118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.09 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 78K |
| 代理商： | 934055906118 |
Philips Semiconductors
Product specification
Dual N-channel TrenchMOS
TM transistor
PHKD3NQ10T
FEATURES
SYMBOL
QUICK REFERENCE DATA
Dual device
Low on-state resistance
V
DS = 100 V
Fast switching
Low profile surface mount
I
D = 3 A
package
R
DS(ON) ≤ 90 m (VGS = 10 V)
GENERAL DESCRIPTION
PINNING
SOT96-1
Dual
N-channel
enhancement
PIN
DESCRIPTION
mode field-effect transistor in a
plastic envelope using ’trench’
1
source 1
technology.
2
gate 1
Applications:-
Motor and relay drivers
3
source 2
d.c. to d.c. converters
4
gate 2
The PHKD3NQ10T is supplied in
the
SOT96-1
(SO8)
surface
5,6
drain 2
mounting package.
7,8
drain 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Continuous drain-source voltage
T
j = 25 C to 150C
-
100
V
DGR
Drain-gate voltage
T
j = 25 C to 150C;
-
100
V
R
GS = 20 k
V
GS
Gate-source voltage
-
± 20
V
I
D
Drain current per MOSFET
T
a = 25 C, t ≤ 10 s
-
3
A
T
a = 70 C, t ≤ 10 s
-
2.4
A
I
D
Drain current per MOSFET (both
T
a = 25 C, t ≤ 10 s
-
2.2
A
MOSFETs conducting)
T
a = 70 C, t ≤ 10 s
-
1.7
A
I
DM
Drain current (pulse peak value per T
a = 25 C
-
12
A
MOSFET)
P
tot
Total power dissipation
T
a = 25 C, t ≤ 10 s
-
2
W
T
a = 70 C, t ≤ 10 s
-
1.3
W
T
stg, Tj
Storage & operating temperature
- 65
150
C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-a
Thermal resistance junction
Surface mounted on FR4 board, t
≤ 10
-
62.5
K/W
to ambient
sec; either or both MOSFETs conducting
R
th j-a
Thermal resistance junction
Surface mounted on FR4 board; either or
150
-
K/W
to ambient
both MOSFETs conducting
d1
g1
s1
d2
g2
s2
12
34
5
6
7
8
pin 1 index
August 1999
1
Rev 1.000
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