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參數(shù)資料
| 型號： | 934055907118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 4 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 5/7頁 |
| 文件大?。?/td> | 82K |
| 代理商： | 934055907118 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
TM transistor
PHK4NQ10T
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10
15
20
25
30
35
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 4A
Tj = 25 C
VDD = 20 V
VDD = 80 V
0
1
2
3
4
5
6
7
8
9
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4 1.5
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
150 C
VGS = 0 V
August 1999
5
Rev 1.000
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