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參數(shù)資料
| 型號(hào)： | 934055916135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁(yè)數(shù)： | 10/15頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | 934055916135 |
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2003 Feb 10
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2043
handbook, halfpage
0
15
10
5
0
60
40
20
0
510
Gp
(dB)
Gp
η
D
(%)
η
D
20
15
PL (PEP) (W)
MCE017
Fig.2
Power gain and efficiency as functions of
peak envelope load power; typical values.
handbook, halfpage
05
10
d3
d5
d7
dim
(dBc)
20
0
20
40
60
80
15
PL (PEP) (W)
MCE018
Fig.3
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0
5
10
20
0
50
10
15
20
30
40
MCE019
(1)
(2)
(3)
dim
(dBc)
PL (PEP) (W)
Fig.4
Third order intermodulation distortion as a
function of peak envelope load power and
IDQ setting; typical values.
(1) IDQ = 55 mA.
(2) IDQ = 85 mA.
(3) IDQ = 115 mA.
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