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參數(shù)資料
| 型號： | 934055918112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934055918112 |
2001 Oct 30
5
Philips Semiconductors
Product specication
860 MHz, 18.5 dB gain power doubler
amplier
BGD812
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
50
60
80
90
70
52
48
40
36
44
400
600
800
MLD351
(1)
(2)
(3)
(4)
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2)
Typ. +3
σ.
(3)
Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
40
50
70
80
60
52
48
40
36
44
400
600
800
MLD352
(1)
(2)
(3)
(4)
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2)
Typ. +3
σ.
(3)
Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
50
60
80
90
70
52
48
40
36
44
400
600
800
MLD353
(1)
(2)
(3)
(4)
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2)
Typ. +3
σ.
(3)
Typ.
(4) Typ.
3 σ.
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