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參數(shù)資料
| 型號(hào)： | 934055919112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 72K |
| 代理商： | 934055919112 |
2001 Nov 01
5
Philips Semiconductors
Product specication
860 MHz, 20 dB gain power doubler amplier
BGD814
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
1000
50
60
80
90
70
52
48
40
36
44
400
600
800
MLD345
(1)
(2)
(3)
(4)
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
1000
40
50
70
80
60
52
48
40
36
44
400
600
800
MLD346
(1)
(2)
(3)
(4)
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
1000
60
70
90
100
80
52
48
40
36
44
400
600
800
MLD347
(1)
(2)
(3)
(4)
Fig.4
Composite second order distortion as a
function of frequency under tilted conditions.
ZS =ZL =75 ; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3
σ.
(3) Typ.
(4) Typ.
3 σ.
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