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參數(shù)資料
| 型號(hào)： | 934055930127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 1805 MHz - 1990 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365A, 4 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 61K |
| 代理商： | 934055930127 |
2000 Oct 17
2
Philips Semiconductors
Product specication
UHF amplier module
BGY2016
FEATURES
26 V nominal supply voltage
16 W output power into a load of 50 with an RF drive
power of
≤20 mW.
APPLICATIONS
Base station transmitting equipment operating in the
1805 to 1990 MHz frequency band.
DESCRIPTION
The BGY2016 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
PINNING - SOT365A
PIN
DESCRIPTION
1
RF input
2VS1
3VS2
4
RF output
Flange
ground
handbook, halfpage
MSA447
2
13
4
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Tmb =25 °C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION
f
(MHz)
VS1
(V)
VS2
(V)
PL
(W)
Gp
(dB)
η
(%)
ZS; ZL
(
)
CW
1805 to 1990
5
26
≥16
≥28
≥30
50
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS1
DC supply voltage
4.5
5.5
V
VS2
DC supply voltage
28
V
PD
input drive power
120
mW
PL
load power
Tmb =25 °C
20
W
Tstg
storage temperature
30
+100
°C
Tmb
operating mounting base temperature
10
+90
°C
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