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參數(shù)資料
| 型號： | 934055936114 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | HERMETIC SEALED, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | 934055936114 |
2000 Feb 01
6
Philips Semiconductors
Product specication
Microwave power transistor
BLS3135-10
handbook, full pagewidth
30
40
C1
C2
MCD862
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Duroid dielectric (
εr = 2.2), thickness 0.38 mm.
The other side is unetched and serves as a ground plane.
C1 = 10 pF (ATC 100A); C2 = 100 pF (ATC 100A).
Fig.8 Component layout for 3.1 to 3.5 GHz class-C test circuit.
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