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參數(shù)資料
| 型號： | 934055946115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 934055946115 |
2001 Nov 07
4
Philips Semiconductors
Product specication
NPN/PNP general purpose transistor
BC847BVN
handbook, halfpage
0
400
600
200
MLD703
101
110
IC (mA)
hFE
102
103
(1)
(3)
(2)
Fig.2
DC current gain as a function of collector
current: typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MLD704
102
101
1
IC (mA)
VBE
mV
10
102
103
(3)
(2)
(1)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MLD705
101
110
IC (mA)
VCEsat
(mV)
102
103
(2)
(1)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current: typical values.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
200
1200
400
600
800
1000
MLD706
1
101
IC (mA)
VBEsat
(mV)
10
102
103
(1)
(3)
(2)
Fig.5
Base-emitter saturation voltage as a
function of collector current.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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