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參數(shù)資料
| 型號(hào)： | 934055946135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 3000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 76K |
| 代理商： | 934055946135 |
2001 Nov 07
3
Philips Semiconductors
Product specication
NPN/PNP general purpose transistor
BC847BVN
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering is reflow soldering.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
notes 1 and 2
416
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
15
nA
VCB = 30 V; IE = 0; Tj = 150 °C
5
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
VCE =5V; IC =2mA
200
450
VCEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
100
mV
IC = 100 mA; IB = 5 mA; note 1
300
mV
VBEsat
collector-emitter saturation
voltage
IC = 10 mA; IB = 0.5 mA
755
mV
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
100
MHz
NPN transistor
VBE
base-emitter turn-on voltage
VCE =5V; IC = 2 mA
580
655
700
mV
Cc
collector capacitance
VCB = 10 V; IE =Ie = 0; f = 1MHz
1.5
pF
Ce
emitter capacitance
VEB = 500 mV; IC =Ic = 0; f = 1MHz
11
pF
PNP transistor
VBE
base-emitter turn-on voltage
VCE = 5 V; IC = 2 mA
600
655
750
mV
Cc
collector capacitance
VCB = 10 V; IC =Ic = 0; f = 1MHz
2.2
pF
Ce
emitter capacitance
VEB = 500 mV; IE =Ie = 0; f = 1MHz
10
pF
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