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參數(shù)資料
| 型號： | 934055952112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 3 A, 600 V, SILICON, RECTIFIER DIODE |
| 文件頁數(shù)： | 11/16頁 |
| 文件大小： | 114K |
| 代理商： | 934055952112 |
1996 Sep 18
4
Philips Semiconductors
Product specication
Fast soft-recovery
controlled avalanche rectiers
BYM36 series
THERMAL CHARACTERISTICS
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥40 m, see Fig.25.
For more information please refer to the
“General Part of associated Handbook”.
trr
reverse recovery time
when switched from
IF = 0.5 A to IR =1A;
measured at IR = 0.25 A;
see Fig. 26
BYM36A to C
100
ns
BYM36D and E
150
ns
BYM36F and G
250
ns
Cd
diode capacitance
f = 1 MHz; VR =0V;
see Figs 23 and 24
BYM36A to C
85
pF
BYM36D and E
75
pF
BYM36F and G
65
pF
maximum slope of reverse recovery
current
when switched from
IF = 1 A to VR ≥ 30 V and
dIF/dt = 1A/s;
see Fig.27
BYM36A to C
7A/
s
BYM36D and E
6A/
s
BYM36F and G
5A/
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-tp
thermal resistance from junction to tie-point
lead length = 10 mm
25
K/W
Rth j-a
thermal resistance from junction to ambient
note 1
75
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dI
R
dt
--------
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