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參數(shù)資料
| 型號(hào)： | 934055954112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大小： | 131K |
| 代理商： | 934055954112 |
2001 Nov 01
2
Philips Semiconductors
Product specication
860 MHz, 20 dB gain power doubler amplier
CGD914; CGD914MI
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a voltage supply of 24 V (DC), employing both GaAs
and Si dies. Both modules are electrically identical, only
the pinning is different.
PINNING - SOT115J
PIN
DESCRIPTION
CGD914
CGD914MI
1
input
output
2 and 3
common
5+VB
+VB
7 and 8
common
9
output
input
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 45 MHz
19.75
20.25
dB
f = 870 MHz
20.2
21.5
dB
Itot
total current consumption (DC)
VB = 24 V
345
375
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
30
V
Vi
RF input voltage
single tone
70
dBmV
132 channels flat
45
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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