參數(shù)資料
型號(hào): 934055957215
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, SC-61B, 4 PIN
文件頁數(shù): 10/16頁
文件大小: 116K
代理商: 934055957215
2000 Mar 29
3
Philips Semiconductors
Product specication
N-channel dual-gate PoLo MOS-FETs
BF1202; BF1202R;
BF1202WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Ts is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
10
V
ID
drain current
30
mA
IG1
gate 1 current
±10
mA
IG2
gate 2 current
±10
mA
Ptot
total power dissipation
BF1202; BF1202R
Ts ≤ 113 °C; note 1
200
mW
BF1202WR
Ts ≤ 119 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
BF1202; BF1202R
185
K/W
BF1202WR
155
K/W
handbook, halfpage
050
(1)
(2)
Ts (°C)
Ptot
(mW)
100
200
250
0
200
150
100
50
MCD951
Fig.4 Power derating curve.
(1) BF1202WR.
(2) BF1202; BF1202R.
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