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參數(shù)資料
| 型號： | 934055960215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, SC-61B, 4 PIN |
| 文件頁數(shù)： | 16/16頁 |
| 文件大小： | 113K |
| 代理商： | 934055960215 |
2000 Mar 29
9
Philips Semiconductors
Product specication
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R;
BF1201WR
handbook, full pagewidth
DUT
C1
4.7 nF
R1
10 k
MGS315
C4
4.7 nF
L1
≈2.2 H
C3
4.7 nF
RL
50
VGG
VAGC
VDS
RGEN
50
VI
R2
50
4.7 nF
C2
RG1
Fig.21 Cross-modulation test set-up.
Table 1
Scattering parameters: VDS =5V; VG2-S =4V; ID = 15 mA; Tamb =25 °C
Table 2
Noise data: VDS =5V; VG2-S =4V; ID = 15 mA; Tamb =25 °C
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.987
4.72
2.775
174.6
0.0006
88.8
0.997
1.84
100
0.985
9.39
2.774
169.5
0.0010
86.7
0.997
3.37
200
0.978
18.59
2.731
159.1
0.0019
79.7
0.996
6.72
300
0.976
27.74
2.671
148.8
0.0026
74.2
0.994
10.02
400
0.949
36.59
2.599
138.8
0.0032
69.9
0.992
13.33
500
0.928
45.08
2.501
129.1
0.0035
65.9
0.989
16.55
600
0.905
53.26
2.400
119.8
0.0035
64.6
0.986
19.64
700
0.882
61.07
2.297
110.9
0.0033
65.7
0.982
22.63
800
0.860
68.48
2.199
102.4
0.0029
69.1
0.979
25.54
900
0.838
75.55
2.096
94.2
0.0024
83.3
0.975
28.44
1000
0.818
82.23
1.997
86.3
0.0021
103.8
0.971
31.42
f
(MHz)
Fmin
(dB)
Γopt
Rn
(
)
(ratio)
(deg)
400
1
0.825
38.93
50
800
1.9
0.753
70.65
38.75
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