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參數(shù)資料
| 型號(hào)： | 934055961135 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 14/16頁 |
| 文件大小： | 113K |
| 代理商： | 934055961135 |
2000 Mar 29
7
Philips Semiconductors
Product specication
N-channel dual-gate PoLo MOS-FETs
BF1201; BF1201R;
BF1201WR
handbook, halfpage
024
6
60
0
20
40
MCD943
VG2-S (V)
IG1
(
A)
4 V
3.5 V
3 V
4.5 V
VGG = 5 V
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
VDS = 5 V; Tj =25 °C.
RG1 =62k (connected to VGG); see Fig.21.
handbook, halfpage
01
2
4
0
50
10
3
VAGC (V)
gain
reduction
(dB)
20
30
40
MCD944
Fig.14 Typical gain reduction as a function of the
AGC voltage; see Fig.21.
VDS = 5 V; VGG = 5 V; RG1 =62k;
f = 50 MHz; Tamb =25 °C.
handbook, halfpage
0
gain reduction (dB)
10
50
120
110
90
80
100
20
30
40
MCD945
Vunw
(dB
V)
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.21.
VDS = 5 V; VGG = 5 V; RG1 =62k; f = 50 MHz;
funw = 60 MHz; Tamb =25 °C.
handbook, halfpage
050
20
0
4
8
12
16
10
20
30
40
gain reduction (dB)
ID
(mA)
MCD946
Fig.16 Drain current as a function of gain
reduction; typical values; see Fig.21.
VDS = 5 V; VGG = 5 V; RG1 =62k;
f = 50 MHz; Tamb =25 °C.
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