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參數(shù)資料
| 型號： | 934055964215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, SST, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 49K |
| 代理商： | 934055964215 |
2000 Apr 11
3
Philips Semiconductors
Product specication
PNP high-voltage transistor
MMBTA92
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
500
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = 200 V
250
nA
IEBO
emitter cut-off current
IC = 0; VEB = 3V
100
nA
hFE
DC current gain
VCE = 10 V; note 1
IC = 1mA
25
IC = 10 mA
40
IC = 30 mA
25
VCEsat
collector-emitter saturation voltage
IC = 20 mA; IB = 2mA
500
mV
VBEsat
base-emitter saturation voltage
IC = 20 mA; IB = 2mA
900
mV
Cc
collector capacitance
IE =ie = 0; VCB = 20 V;
f = 1 MHz
6pF
fT
transition frequency
IC = 10 mA; VCE = 20 V;
f = 100 MHz
50
MHz
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