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參數(shù)資料
| 型號： | 934056017127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, TO-220F, FULLPACK-3 |
| 文件頁數(shù)： | 9/13頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 934056017127 |
Philips Semiconductors
BUK7735-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 15 February 2001
5 of 13
9397 750 07998
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
234V
Tj = 150 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS =55V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 150 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS = 10 V; ID =20A;
Tj =25 °C
29
35
m
Tj = 150 °C
64
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
650
870
pF
Coss
output capacitance
170
200
pF
Crss
reverse transfer capacitance
110
150
pF
td(on)
turn-on delay time
VDD =30V; RL = 1.2 ;
VGS = 10 V; RG =10 ;
10
ns
tr
rise time
62
ns
td(off)
turn-off delay time
24
ns
tf
fall time
20
ns
Ld
internal drain inductance
measured from drain lead
from package to centre of
die
4.5
nH
Ls
internal source inductance
measured from source lead
from package to source
bond pad
7.5
nH
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