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參數(shù)資料
| 型號： | 934056022127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 66 A, 55 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 934056022127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9516-55A
Logic level FET
BUK9616-55A
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D = 49 A; VDD ≤ 25 V;
-
120
mJ
unclamped inductive turn-off
V
GS = 5 V; RGS = 50 ; Tmb = 25 C
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D/PD 25 C = f(Tmb)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D/ID 25 C = f(Tmb); conditions: VGS ≥ 5 V
Fig.3. Safe operating area. T
mb = 25 C
I
D & IDM = f(VDS); IDM single pulse; parameter tp
Fig.4. Transient thermal impedance.
Z
th j-mb = f(t); parameter D = tp/T
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1
10
100
1000
1
10
100
1000
VDS / V
ID / A
D.C.
100 ms
10 ms
RDS(on) = VDS/ID
1 ms
10 us
100 us
tp =
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
Zth / (K/W)
0
0.5
0.2
0.1
0.05
0.02
0.001
0.01
0.1
1
10
0.000001
0.0001
0.01
1
100
10000
VDS / V
Tt
tp
D=
tp
T
PD
D =
May 2000
3
Rev 1.000
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