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參數(shù)資料
| 型號： | 934056045115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMD, UMT5, SC-88A, 5 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | 934056045115 |
2000 Sep 25
4
Philips Semiconductors
Product specication
Quadruple ESD transient voltage suppressor
BZA800A-series
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 200 mA
1.3
V
IR
reverse current
BZA856A
VR =3V
2000
nA
BZA862A
VR =4V
700
nA
BZA868A
VR = 4.3 V
200
nA
BZA820A
VR =15V
100
nA
VZ
working voltage
IZ =1mA
BZA856A
5.32
5.6
5.88
V
BZA862A
5.89
6.2
6.51
V
BZA868A
6.46
6.8
7.14
V
BZA820A
19
20
21
V
rdiff
differential resistance
IZ =1mA
BZA856A
400
BZA862A
300
BZA868A
200
BZA820A
125
SZ
temperature coefcient
IZ =1mA
BZA856A
0.2
mV/K
BZA862A
1.8
mV/K
BZA868A
3
mV/K
BZA820A
16
mV/K
Cd
diode capacitance
f = 1 MHz; VR =0
BZA856A
240
pF
BZA862A
200
pF
BZA868A
180
pF
BZA820A
50
pF
IZSM
non-repetitive peak reverse current
tp = 1 ms; Tamb =25 °C
BZA856A
3.2
A
BZA862A
2.9
A
BZA868A
2.6
A
BZA820A
0.6
A
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