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參數(shù)資料
| 型號： | 934056119118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 100 V, 0.084 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 141K |
| 代理商： | 934056119118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9575-100A
Logic level FET
BUK9675-100A
Fig.17. Normalised avalanche energy rating.
W
DSS% = f(Tmb); conditions: ID = 75 A
Fig.18. Avalanche energy test circuit.
Fig.19. Maximum permissible repetitive avalanche
current(I
AV) versus avalanche time(tAV) for unclamped
inductive loads.
Fig.20. Switching test circuit.
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
1
10
100
0.001
0.01
0.1
1
10
Avalanche Time, tAV (ms)
IAV
Tj prior to avanche 150C
25C
1
10
100
0.001
0.01
0.1
1
10
Avalanche Time, tAV (ms)
IAV
Tj prior to avanche 150C
25C
1
10
100
0.001
0.01
0.1
1
10
Avalanche Time, tAV (ms)
IAV
Tj prior to avalanche 150C
25C
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
W
DSS = 0.5 LID
2
BV
DSS/(BVDSS VDD)
October 2000
6
Rev 1.200
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