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參數(shù)資料
| 型號： | 934056121118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 11 A, 100 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 68K |
| 代理商： | 934056121118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK95180-100A
Logic level FET
BUK96180-100A
Fig.5. Typical output characteristics, T
j = 25 C.
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 25 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
0
5
10
15
20
25
02468
10
VDS/V
ID/A
2.8
3.0
3.6
3.8
4.0
5.0
10.0
VGS/V =
2.2
2.6
3.4
3.2
2.4
0
2
4
6
8
10
12
02468
VGS/V
ID/A
Tj/C= 175
25
100
120
140
160
180
200
220
240
2468
10
12
ID/A
3.2
3.6
3.8
4.0
3.4
5.0
3.0
RDS(ON)/mOhm
0
2
4
6
8
10
12
14
16
02468
10
12
14
ID/A
gfs/S
0.5
1
1.5
2
2.5
3
-100
-50
0
50
100
150
200
Tmb / degC
a
Rds(on) normalised to 25degC
150
160
170
180
190
200
210
220
230
240
345678
9
10
VGS/V
RDS(ON) Ohm
May 2000
4
Rev 1.100
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