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參數(shù)資料
| 型號： | 934056189115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | 934056189115 |
2000 Aug 01
4
Philips Semiconductors
Product specication
NPN resistor-equipped transistors
PUMH10
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
ICBO
collector-base cut-off current
IE = 0; VCB =50V
100
nA
ICEO
collector-emitter cut-off current
IB = 0; VCE =30V
1
A
IB = 0; VCE = 30 V; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
IC = 0; VEB =5V
180
A
hFE
DC current gain
IC = 10 mA; VCE = 5 V
100
VCEsat
saturation voltage
IC = 5 mA; IB = 0.25 mA
100
mV
Vi(off)
input-off voltage
IC = 100 A; VCE =5V
0.6
0.5
V
Vi(on)
input-on voltage
IC = 5 mA; VCE = 0.3 V
1.1
0.75
V
R1
input resistor
1.54
2.2
2.86
k
resistor ratio
17
21
26
k
Cc
collector capacitance
IE =Ie = 0; VCB =10V; f=1MHz
2.5
pF
R2
R1
--------
handbook, halfpage
103
102
10
1
MLD383
101
1
(3)
10
IC (mA)
hFE
102
(1)
(2)
Fig.3
DC current gain as a function of collector
current; typical values.
VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
handbook, halfpage
10
102
103
MLD382
101
102
1
10
(2)
IC (mA)
VCEsat
(mV)
(1)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb =25 °C.
(3) Tamb = 40 °C.
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