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參數資料
| 型號： | 934056191127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 55 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數： | 2/9頁 |
| 文件大?。?/td> | 78K |
| 代理商： | 934056191127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK9535-55A
Logic level FET
BUK9635-55A
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
2
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 25 A
-
26
35
m
resistance
T
j = 175C
-
70
m
V
GS = 10 V; ID = 25 A
-
24
32
m
V
GS = 4.5 V; ID = 25 A
-
26.5
38
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
880
1173
pF
C
oss
Output capacitance
-
165
198
pF
C
rss
Feedback capacitance
-
111
152
pF
t
d on
Turn-on delay time
V
DD = 30 V; Rload =1.2;-
6
9
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10
-
3655ns
t
d off
Turn-off delay time
-
96
134
ns
t
f
Turn-off fall time
-
73
102
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die(SOT404)
L
s
Internal source inductance
Measured from source lead to
-
7.5
-
nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
34
A
current
I
DRM
Pulsed reverse drain current
-
133
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.85
1.2
V
I
F = 34 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 34 A; -dIF/dt = 100 A/s;
-
36
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.07
-
C
February 2000
2
Rev 1.000
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