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參數(shù)資料
| 型號(hào)： | 934056251118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 34 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SC-63, DPAK-3 |
| 文件頁(yè)數(shù)： | 10/13頁(yè) |
| 文件大小： | 284K |
| 代理商： | 934056251118 |
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Philips Semiconductors
BUK7240-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 03 October 2000
6 of 13
9397 750 07572
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS =25A;VGS =0V;
Figure 15
0.85
1.2
V
trr
reverse recovery time
IS =17A; dIS/dt = 100 A/s
VGS = 10 V; VDS =25V
70
ns
Qr
recovered charge
240
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °CTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
On-state resistance: typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na56
0
20
40
60
80
100
120
02
46
8
10
VDS(V)
ID(A)
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
10
VGS= 20(V)
03na54
20
25
30
35
40
45
50
5
6
7
8
9 1011 1213 1415 1617 1819 20
VGS(V)
RDSon
(mOhm)
03na57
20
30
40
50
60
70
80
90
100
0
20
40
60
80
100
120
ID(A)
RDSon
(mOhm)
VGS= 6(V)
6.5
7
8
10
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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