參數(shù)資料
型號: 934056258127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 12/15頁
文件大小: 332K
代理商: 934056258127
Philips Semiconductors
BUK9575-55A; BUK9675-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 9 February 2001
6 of 15
9397 750 07831
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 15 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
33
ns
Qr
recovered charge
60
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =10A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nd43
0
20
40
60
02
46
8
10
VDS (V)
ID
(A)
VGS (V) =
2.2
3
4
5
10
6
7
8
03nd42
40
60
80
100
120
246
8
10
VGS (V)
RDSon
(m
)
03nd44
40
60
80
100
120
140
160
180
0
1020
304050
ID (A)
RDSon
(m
)
VGS (V) =
3 3.2
3.4
3.6
3.8 4
5
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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934056269118 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET
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