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參數(shù)資料
| 型號(hào)： | 934056259127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 322K |
| 代理商： | 934056259127 |
Philips Semiconductors
BUK7575-55A; BUK7675-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 8 December 2000
6 of 15
9397 750 07696
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
Figure 15
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
32
ns
Qr
recovered charge
120
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nc09
0
10
20
30
40
50
60
02
46
8
10
VDS (V)
ID
(A)
4.5
5.5
6.5
7.5
8.5
20
16 14
9.5
12
10.5
VGS (V) =
03nc08
40
60
80
100
120
140
160
510
15
20
VGS (V)
RDSon
(m
)
03nc10
40
60
80
100
120
140
160
180
0
1020
3040
50
ID (A)
RDSon
(m
)
VGS (V) =
5.5
6 6.5 7
810
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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