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參數(shù)資料
| 型號： | 934056260127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 55 V, 0.161 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 4/9頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934056260127 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK95150-55A
Logic level FET
BUK96150-55A
Fig.5. Typical output characteristics, T
I
D = f(VDS); parameter VGS
Fig.6. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(ID); parameter VGS
Fig.7. Typical on-state resistance, T
j = 25 C.
R
DS(ON) = f(VGS); conditions: ID = 13 A;
Fig.8. Typical transfer characteristics.
I
D = f(VGS) ; conditions: VDS = 25 V; parameter Tj
Fig.9. Typical transconductance, T
j = 25 C.
g
fs = f(ID); conditions: VDS = 25 V
Fig.10. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 C = f(Tj); ID = 25 A; VGS = 5 V
0
10
20
30
40
50
60
70
80
90
100
02468
10
VDS/V
ID/A
2.8
3.0
3.6
3.8
4.0
6.0
10.0
VGS/V =
2.6
3.4
3.2
2.4
4.4
4.8
5.0
5.5
6.5
7.0
7.5
0
10
20
30
40
50
60
70
01234567
VGS/V
ID/A
Tj/C= 175
oC
25
oC
0
10203040506070
20
25
30
35
40
ID/A
RDS(ON)/mOhm
VGS/V=
3.0
3.2
3.4
3.6
4.0
5.0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
ID/A
gfs/S
3456789
10
22
23
24
25
26
27
28
29
30
31
32
33
ID/A
RDS(ON)/mOhm
0.5
1
1.5
2
2.5
3
-100
-50
0
50
100
150
200
Tmb / degC
a
Rds(on) normalised to 25degC
February 2000
4
Rev 1.000
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