- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄24704 > 934056278127 (NXP SEMICONDUCTORS) 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PDF資料下載
參數(shù)資料
| 型號(hào)： | 934056278127 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁(yè)數(shù)： | 11/15頁(yè) |
| 文件大?。?/td> | 307K |
| 代理商： | 934056278127 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)當(dāng)前第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)
Philips Semiconductors
BUK7560-100A; BUK7660-100A
TrenchMOS standard level FET
Product specication
Rev. 01 — 22 February 2001
5 of 15
9397 750 07807
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
100
V
Tj = 55 °C89
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =15A;
Tj =25 °C
51
60
m
Tj = 175 °C
150
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
1030
1377
pF
Coss
output capacitance
143
171
pF
Crss
reverse transfer capacitance
90
120
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =10V; RG =10 ;
10
ns
tr
rise time
45
ns
td(off)
turn-off delay time
31
ns
tf
fall time
20
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056284118 | 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934056279127 | 26 A, 100 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056285118 | 26 A, 100 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 06035C222K-MR | CAP. 2.2NF MINIREEL 500PCS |
| 06033C223K-MR | CAP. 22NF MINIREEL 500PCS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。