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參數(shù)資料
| 型號： | 934056281127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 46 A, 55 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 12/15頁 |
| 文件大小： | 333K |
| 代理商： | 934056281127 |
Philips Semiconductors
BUK9524-55A; BUK9624-55A
TrenchMOS logic level FET
Product specication
Rev. 01 — 29 September 2000
6 of 15
9397 750 07538
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
Figure 15
0.85
1.2
V
trr
reverse recovery time
IS =46A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
50
ns
Qr
recovered charge
85
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25°C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na05
0
20
40
60
80
100
120
140
160
180
02
46
8
10
VDS(V)
ID
(A)
2.2
3
4
5
6
7
10
8
VGS = 9(V)
03na03
10
15
20
25
30
35
40
45
24
68
10
VGS(V)
RDSon
(mOhm)
03na06
10
15
20
25
30
35
40
45
50
10
30
50
70
90
ID(A)
RDSon
(mOhm)
5
4
3.8
3.6
3.4
3.2
3
VGS(V)=
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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