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參數(shù)資料
| 型號(hào)： | 934056282127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 75 A, 75 V, 0.0099 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | PLASTIC, SC-46, 3 PIN |
| 文件頁數(shù)： | 14/15頁 |
| 文件大?。?/td> | 315K |
| 代理商： | 934056282127 |
Philips Semiconductors
BUK9509-75A; BUK9609-75A
TrenchMOS logic level FET
Product specication
Rev. 02 — 06 November 2000
8 of 15
9397 750 07656
Philips Electronics N.V. 2000. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nb39
0
20
40
60
80
100
120
0.0
1.0
2.0
3.0
4.0
VGS (V)
ID
(A)
Tj = 175
OC
Tj = 25
OC
03nb37
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
50
100
150
QG (nC)
VGS
(V)
VDD= 60 V
VDD= 14 V
03nb36
0
20
40
60
80
100
120
0.0
0.2
0.4
0.6
0.8
1.0
VSD (V)
IS
(A)
Tj = 175
OC
Tj = 25
O C
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