參數(shù)資料
型號: 934056316118
廠商: NXP SEMICONDUCTORS
元件分類: 外設(shè)及接口
英文描述: 3.6 A BUF OR INV BASED PRPHL DRVR, PSSO4
封裝: PLASTIC, SOT-426, D2PAK-5
文件頁數(shù): 16/16頁
文件大小: 412K
代理商: 934056316118
Philips Semiconductors
BUK208-50Y; BUK213-50Y
Single channel high-side TOPFET
Product data
Rev. 02 — 06 June 2002
9 of 16
9397 750 09384
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Dynamic characteristics
VIG =5V; 40 °C ≤ Tj ≤ +150 °C
Fig 11. Battery-load threshold voltage as a function of battery-ground voltage.
03pa40
0
10
20
30
0
10
20
30
40
50
max
typ
min
VBG (V)
VBL(TO)
(V)
Table 7:
Switching characteristics
Tmb =25 °C; VBG = 13 V; resistive load RL =13 . Figure 13
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Turn-on measured from the input going HIGH
td(on)
turn-on delay time
to 10% VL
-50
80
s
dV/dton
rising slew rate
30 to 70% VL
-
0.5
1.0
V/
s
ton
turn-on switching time
to 90% VL
-
85
160
s
Turn-off measured from the input going LOW
td(off)
turn-off delay time
to 90% VL
-50
80
s
dV/dtoff
falling slew rate
70 to 30% VL
-
0.8
1.2
V/
s
toff
turn-off switching time
to 10% VL
-
70
120
s
Table 8:
Status response times
Limits are valid for
40 °C ≤ Tmb ≤ +150 °C and typical values for Tmb =25 °C unless otherwise specied.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Measured from when the input goes HIGH
td(sc)
short circuit response time
VBL >VBL(TO); Figure 16
-
180
250
s
td(lc)
low current detect response time
IL <IL(LC); Figure 15
-
200
-
s
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