參數(shù)資料
型號(hào): 934056334115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁數(shù): 12/12頁
文件大?。?/td> 103K
代理商: 934056334115
2001 Apr 25
9
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1204
Scattering parameters
VDS =5V; VG2-S =4V; ID = 12 mA; Tamb =25 °C.
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.991
3.29
2.95
175.78
0.00060
85.25
0.995
1.44
100
0.987
7.12
2.90
171.61
0.00119
84.74
0.994
2.90
200
0.981
14.21
2.86
163.45
0.00234
80.85
0.992
5.70
300
0.969
21.22
2.83
155.11
0.00339
75.77
0.989
8.50
400
0.958
28.14
2.79
147.37
0.00429
72.23
0.987
11.25
500
0.939
35.01
2.74
139.04
0.00508
68.24
0.983
13.96
600
0.921
41.75
2.68
131.35
0.00565
64.97
0.981
16.67
700
0.898
48.51
2.62
123.38
0.00611
61.90
0.976
19.36
800
0.874
54.96
2.55
115.74
0.00646
57.77
0.973
22.04
900
0.847
61.62
2.49
107.84
0.00662
55.04
0.969
24.80
1000
0.817
67.84
2.41
100.24
0.00670
52.16
0.966
27.45
handbook, full pagewidth
DUT
C1
4.7 nF
R1
10 k
MGS315
C4
4.7 nF
L1
2.2 H
C3
4.7 nF
RL
50
VGG
VAGC
VDS
RGEN
50
VI
R2
50
4.7 nF
C2
RG1
Fig.19 Cross-modulation test set-up (for one MOS-FET).
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