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參數(shù)資料
| 型號(hào)： | 934056339127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 12 A BUF OR INV BASED PRPHL DRVR, PSFM3 |
| 封裝： | PLASTIC, TO-220AB, SOT-78B, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 39K |
| 代理商： | 934056339127 |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK117-50DL
Logic level TOPFET
OUTPUT CHARACTERISTICS
Limits are for -40C
≤ T
mb
≤ 150C; typicals are for T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS = 0 V
V
(CL)DSS
Drain-source clamping voltage
I
D = 10 mA
50
-
V
I
DM = 1 A; tp
≤ 300 s; δ ≤ 0.01
50
60
70
V
I
DSS
Drain source leakage current
V
DS = 40 V
-
100
A
T
mb = 25 C
-
0.1
10
A
On-state
I
DM = 3 A; tp
≤ 300 s; δ ≤ 0.01
R
DS(ON)
Drain-source resistance
V
IS
≥ 4.4 V
-
190
m
T
mb = 25 C
-
68
100
m
V
IS
≥ 4 V
-
200
m
T
mb = 25 C
-
72
105
m
OVERLOAD CHARACTERISTICS
-40C
≤ T
mb
≤ 150C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Short circuit load
V
DS = 13 V
I
D
Drain current limiting
V
IS = 5 V;
T
mb = 25C
8
12
16
A
4.4 V
≤ V
IS
≤ 5.5 V
6
-
18
A
4 V
≤ V
IS
≤ 5.5 V
5
-
18
A
Overload protection
V
IS = 5 V;
T
mb = 25C
P
D(TO)
Overload power threshold
device trips if P
D > PD(TO)
20
55
80
W
T
DSC
Characteristic time
which determines trip time
1
200
350
600
s
Overtemperature protection
T
j(TO)
Threshold junction
150
170
-
C
temperature
2
1 Trip time t
d sc varies with overload dissipation PD according to the formula td sc
≈ T
DSC / ln[ PD / PD(TO) ].
2 This is independent of the dV/dt of input voltage V
IS.
May 2001
3
Rev 1.800
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