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參數(shù)資料
| 型號(hào)： | 934056342127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 44 A BUF OR INV BASED PRPHL DRVR, PZFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263B-01, 5 PIN |
| 文件頁(yè)數(shù)： | 7/13頁(yè) |
| 文件大?。?/td> | 165K |
| 代理商： | 934056342127 |
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Philips Semiconductors
Product Specification
Logic level TOPFET
BUK124-50L
TO-220 version of BUK135-50L
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
R
th j-mb
Junction to mounting base
-
1.2
1.39
K/W
OUTPUT CHARACTERISTICS
Limits are for -40C
≤ T
mb ≤ 150C; typicals are for Tmb = 25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Off-state
V
IS = 0 V
V
(CL)DSS
Drain-source clamping voltage
I
D = 10 mA
50
-
70
V
I
DM = 4 A; tp ≤ 300 s; δ ≤ 0.01
50
60
70
V
I
DSS
Drain source leakage current
1
V
PS = 0 V; VDS = 40 V
-
100
A
T
mb = 25C
-
0.1
10
A
On-state
t
p ≤ 300 s; δ ≤ 0.01; VPS ≥ 4 V
R
DS(ON)
Drain-source resistance
I
DM = 10 A; VIS ≥ 4.4 V
-
50
m
T
mb = 25C
-
21
28
m
INPUT CHARACTERISTICS
Limits are for -40C
≤ T
mb ≤ 150C; typicals are for Tmb = 25C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Normal operation
V
IS(TO)
Input threshold voltage
2
I
D = 1 mA
0.6
-
2.6
V
T
mb = 25C
1.1
1.6
2.1
V
I
IS
Input current
V
IS = 5 V
-
16
100
A
V
(CL)IS
Input clamping voltage
I
I = 1 mA
5.5
6.4
8.5
V
R
IG
Internal series resistance
3
to gate of power MOSFET
-
1.7
-
k
Overload protection latched
V
PS ≥ 4 V
I
ISL
Input current
V
IS = 5 V
1
2.7
4
mA
1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2 The measurement method is simplified if V
PS = 0 V, in order to distinguish ID from IDSP.
Refer to OPEN CIRCUIT LOAD DETECTION
CHARACTERISTICS.
3 This is not a directly measurable parameter.
January 2003
3
Rev 1.110
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