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參數(shù)資料
| 型號： | 934056346127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 62 A BUF OR INV BASED PRPHL DRVR, PZFM5 |
| 封裝： | PLASTIC, TO-220, SOT-263B-01, 5 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 934056346127 |
Philips Semiconductors
Product specification
Logic level TOPFET
BUK125-50L
TO-220 version of BUK136-50L
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Continuous voltage
V
DS
Drain source voltage
1
V
IS = 0 V
-
50
V
Continuous currents
I
D
Drain current
V
PS = 5 V; Tmb = 25C
-
self -
A
limited
V
PS = 0 V; Tmb = 80C
-
40
A
I
Input current
-5
5
mA
I
F
Flag current
-5
5
mA
I
P
Protection supply current
-5
5
mA
Thermal
P
tot
Total power dissipation
T
mb = 25C
-
107
W
T
stg
Storage temperature
-55
175
C
T
j
Junction temperature
2
continuous
-
150
C
T
sold
Mounting base temperature
during soldering
-
260
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model;
-
2
kV
voltage
C = 250 pF; R = 1.5 k
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply
For overload conditions an n-MOS
The drain current is limited to
connected, TOPFET can protect
transistor turns on between the
reduce dissipation in case of short
itself from two types of overload -
input and source to quickly
circuit load. Refer to OVERLOAD
overtemperature and short circuit
discharge the power MOSFET
CHARACTERISTICS.
load.
gate capacitance.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
Overload protection
3
protection supply
V
DS
Drain source voltage
V
PS ≥ 4 V
0
35
V
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Inductive load turn off
I
DM = 25 A; VDD ≤ 20 V
E
DSM
Non-repetitive clamping energy
T
mb = 25C
-
550
mJ
E
DRM
Repetitive clamping energy
T
mb ≤ 95C; f = 250 Hz
-
60
mJ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher T
j is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously
latched, it would be reset by this condition.
January 2003
2
Rev 1.010
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