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參數(shù)資料
| 型號： | 934056364115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 20 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 166K |
| 代理商： | 934056364115 |
2002 May 08
3
Philips Semiconductors
Product specication
NPN resistor-equipped transistor;
R1 = 100 k
, R2 = 100 k
PDTC115EE
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Refer to standard SOT416 (SC-75) mounting conditions.
THERMAL CHARACTERISTICS
Note
1. Refer to standard SOT416 (SC-75) mounting conditions.
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
50
V
VEBO
emitter-base voltage
open collector
10
V
Vi
input voltage
positive
+40
V
negative
10
V
IO
output current (DC)
20
mA
ICM
peak collector current
100
mA
Ptot
total power dissipation
150
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 50 V; IE =0
100
nA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB =0
1
A
VCE = 30 V; IB = 0; Tj = 150 °C
50
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
50
A
hFE
DC current gain
VCE =5V; IC =5mA
80
VCEsat
collector-emitter saturation voltage
IC = 300 mA; IB =10mA
150
mV
Vi(off)
input off voltage
VCE =5V; IC = 100 A
0.5
V
Vi(on)
input on voltage
VCE = 0.3 V; IC = 1 mA
3
V
R1
input resistor
70
100
130
k
resistor ratio
0.8
1
1.2
Cc
collector capacitance
IE =ie = 0; VCB =10V;
f = 1 MHz
2.5
pF
R2
R1
--------
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