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參數(shù)資料
| 型號： | 934056394115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 二極管(射頻、小信號、開關(guān)、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封裝： | ULTRA SMALL, PLASTIC, SMD, UFP, SC-79, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 934056394115 |
2001 Feb 20
2
Philips Semiconductors
Product specication
Schottky barrier diode
1PS79SB30
FEATURES
Very low forward voltage
Very low reverse current
Guard ring protected
Ultra small SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits
Blocking diodes
Low power consumption applications (e.g. hand-held
applications).
DESCRIPTION
Planar Schottky barrier diode encapsulated in a SC-79
(SOD523) ultra small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
12
Top view
MGU325
Fig.1
Simplified outline (SC-79; SOD523)
and symbol.
Marking code: G1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
40
V
IF
continuous forward current
200
mA
IFRM
repetitive peak forward current
tp ≤ 1s; δ≤ 0.5
300
mA
IFSM
non-repetitive peak forward current
t = 8.3 ms half sinewave;
JEDEC method
1A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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