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參數(shù)資料
| 型號： | 934056418112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 81K |
| 代理商： | 934056418112 |
2000 Oct 03
3
Philips Semiconductors
Preliminary specification
CATV amplifier module
BGE787B
CHARACTERISTICS
Bandwidth 40 to 750 MHz; VB =24V; Tcase =30
°C; ZS =ZL =75 .
Notes
1.
fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
2.
Measured according to DIN45004B;
fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo
6dB;
fr = 749.25 MHz; Vr =Vo
6dB;
measured at fp +fq
fr = 738.25 MHz.
3.
The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
28.5
29.5
dB
f = 750 MHz
29
dB
SL
slope cable equivalent
f = 40 to 750 MHz
0.2
2.2
dB
FL
flatness of frequency response
f = 40 to 750 MHz
±0.45
dB
s11
input return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 750 MHz
14
dB
s22
output return losses
f = 40 to 80 MHz
20
dB
f = 80 to 160 MHz
18.5
dB
f = 160 to 320 MHz
17
dB
f = 320 to 640 MHz
15.5
dB
f = 640 to 750 MHz
14
dB
s21
phase response
f = 50 MHz
135
225
deg
CTB
composite triple beat
110 channels flat;
Vo = 44 dBmV; measured at
745.25 MHz
48
dB
Xmod
cross modulation
110 channels flat;
Vo = 44 dBmV; measured at
55.25 MHz
52
dB
CSO
composite second order distortion
110 channels flat;
Vo = 44 dBmV; measured at
746.5 MHz
56
dB
d2
second order distortion
note 1
70
dB
Vo
output voltage
dim =
60 dB; note 2
59
dBmV
NF
noise figure
f = 50 MHz
5dB
f=750MHz
6.5
dB
PM
positive match
f = 40 MHz to 2 GHz
3dB
Itot
total current consumption (DC)
note 3
340
mA
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