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參數(shù)資料
| 型號： | 934056478118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 75 V, 0.029 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 934056478118 |
Philips Semiconductors
BUK9226-75A
TrenchMOS logic level FET
Product specication
Rev. 01 — 10 October 2000
2 of 13
9397 750 07585
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
[1]
IDM is limited by chip, not package.
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
75
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
45
A
Ptot
total power dissipation
Tmb =25 °C
114
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS =5V; ID = 25 A
22.1
26
m
VGS = 4.5 V; ID =25A
29
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
75
V
VDGR
drain-gate voltage (DC)
RGS =20k
75
V
VGS
gate-source voltage (DC)
±10
V
VGSM
non-repetitive gate-source voltage
tp ≤ 50 s
±15
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V; Figure 2 and 3
45
A
Tmb = 100 °C; VGS =5V; Figure 2
32
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s; Figure 3;
182
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
114
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IDR
reverse drain current (DC)
Tmb =25 °C
45
A
IDRM
pulsed reverse drain current
Tmb =25 °C; pulsed; tp ≤ 10 s
182
A
Avalanche ruggedness
WDSS
non-repetitive avalanche energy
unclamped inductive load; ID =49A;
VDS ≤ 75 V; VGS =5V; RGS =50 ;
starting Tj =25°C
120
mJ
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