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參數(shù)資料
| 型號： | 934056479118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 53 A, 75 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 14/15頁 |
| 文件大小： | 310K |
| 代理商： | 934056479118 |
Philips Semiconductors
BUK7523-75A; BUK7623-75A
TrenchMOS standard level FET
Product specication
Rev. 01 — 09 October 2000
8 of 15
9397 750 07583
Philips Electronics N.V. 2000. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of turn-on
gate charge; typical values.
VGS =0V
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
03nb04
0
5
10
15
20
25
30
35
40
45
50
02
46
VGS(V)
ID
(A)
Tj = 175
OC
Tj = 25
OC
03nb02
0
1
2
3
4
5
6
7
8
9
10
020
40
60
QG(nC)
VGS
(V)
VDS= 60(V)
VDS= 14(V)
03nb01
0
10
20
30
40
50
60
70
80
90
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (V)
IS
(A)
Tj = 175
OC
Tj = 25
OC
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