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參數(shù)資料
| 型號(hào)： | 934056508115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMD, 6 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大?。?/td> | 62K |
| 代理商： | 934056508115 |
2002 Jun 20
3
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4140V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Operated under pulsed conditions: tp ≤ 30 ms; δ≤ 0.2.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Operated under pulsed conditions: tp ≤ 30 ms; δ≤ 0.2.
Soldering
The only recommended soldering method is reflow soldering.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
1A
ICM
peak collector current
3A
ICRP
repetitive peak collector current
note 1
2A
IB
base current (DC)
300
mA
IBM
peak base current
1A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
300
mW
Tamb ≤ 25 °C; note 3
500
mW
Tamb ≤ 25 °C; notes 1 and 2
1.2
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
410
K/W
note 2
215
K/W
notes 1 and 3
110
K/W
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