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參數(shù)資料
| 型號： | 934056515215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 57K |
| 代理商： | 934056515215 |
2001 Jul 13
2
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4140T
FEATURES
Low collector-emitter saturation voltage
High current capabilities.
Improved device reliability due to reduced heat
generation.
APPLICATIONS
General purpose switching and muting
LCD backlighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5140T.
MARKING
TYPE NUMBER
MARKING CODE
PBSS4140T
ZTp
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
Fig.1
Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
ICM
peak collector current
2
A
RCEsat
equivalent on-resistance
<500
m
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
40
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
1A
ICM
peak collector current
2A
IBM
peak base current
1A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
Tamb ≤ 25 °C; note 2
450
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
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