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參數(shù)資料
| 型號： | 934056519112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 9/15頁 |
| 文件大小： | 161K |
| 代理商： | 934056519112 |
2003 Feb 10
3
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1820-70
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth j-h = 1.15 K/W, unless otherwise specied.
Ruggedness in class-AB operation
The BLF1820-70 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; IDQ = 500 mA; PL = 65 W; f = 2000 MHz.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
65
V
VGS
gate-source voltage
±15
V
ID
DC drain current
9A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to
heatsink
Th =25 °C, note 1
1.15
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 1.4 mA
65
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID = 140 mA
4.4
5.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
10
A
IDSX
on-state drain current
VGS =VGSth +9V; VDS =10V
18
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
25
nA
gfs
forward transconductance
VDS = 10 V; ID =5A
4.2
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID =5A
0.15
Crss
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
3.4
pF
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
2-tone, class-AB
f1 = 2000; f2 = 2000.1
26
500
65 (PEP)
>11
>30
≤25
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