參數(shù)資料
型號： 934056520112
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 10/15頁
文件大?。?/td> 165K
代理商： 934056520112
2003 Feb 10
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF1820-90
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth j-h = 0.81 K/W; unless otherwise specied.
Ruggedness in class-AB operation
The BLF1820-90 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: VDS = 26 V; IDQ = 750 mA; PL = 90 W; f = 2000 MHz (single tone).
MODE OF OPERATION
f
(MHz)
VDS
(V)
IDQ
(mA)
PL
(W)
Gp
(dB)
η
D
(%)
dim
(dBc)
Two-tone, class-AB
f1 = 2000; f2 = 2000.1
26
750
90 (PEP)
>11
>30
≤25
handbook, halfpage
15
0
40
120
5
80
PL (W) (PEP)
Gp
(dB)
Gp
ηD
(%)
10
50
0
10
20
30
40
MLD556
ηD
Fig.2
Power gain and drain efficiency as functions
of peak envelope load power; typical
values.
VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
handbook, halfpage
040
PL (PEP) (W)
dim
(dBc)
120
0
20
60
80
40
d3
d5
80
MLD557
d7
VDS = 26 V; IDQ = 750 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.3
Intermodulation distortion products as
functions of peak envelope load power;
typical values.
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