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| 型號： | 934056568118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 9000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大小： | 243K |
| 代理商： | 934056568118 |
Philips Semiconductors
Si4416DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 05 June 2001
3 of 13
9397 750 08299
Philips Electronics N.V. 2001. All rights reserved.
VGS ≥ 10 V
Fig 1.
Normalized total power dissipation as a
function of ambient temperature.
Fig 2.
Normalized continuous drain current as a
function of ambient temperature.
Tamb =25 °C; IDM is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
T
amb
(
o
C)
(%)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
amb
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
D
I
D
I
D25 C
°
()
-------------------
100%
×
=
03af20
0.01
0.1
1
10
100
0.1
1
10
100
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10 s
100 s
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