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參數(shù)資料
| 型號： | 934056607215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934056607215 |
2001 Oct 31
4
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5240T
CHARACTERISTICS
Tamb =25 °C unless otherwise specied.
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, standard footprint.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB = 30 V; IE =0
100
nA
VCB = 30 V; IE = 0; Tj = 150 °C 50
A
IBEO
emitter-base cut-off current
VEB = 4 V; IC =0
100
nA
hFE
DC current gain
VCE = 2V
IC = 100 mA
300
450
IC = 500 mA
260
350
IC = 1 A
210
290
IC = 2 A
100
180
VCEsat
collector-emitter saturation voltage IC = 100 mA; IB = 1mA
55
100
mV
IC = 500 mA; IB = 50 mA
70
110
mV
IC = 750 mA; IB = 15 mA
140
225
mV
IC = 1 A; IB = 50 mA
140
225
mV
IC = 2 A; IB = 200 mA
240
350
mV
RCEsat
equivalent on-resistance
IC = 500 mA; IB = 50 mA;
note 1
160
<220
m
VBEsat
base-emitter saturation voltage
IC = 2 A; IB = 200 mA
1.1
V
VBEon
base-emitter turn-on voltage
VCE = 2 V; IC = 100 mA
0.75
V
Cc
collector capacitance
VCB = 10 V; IE =Ie =0;
f = 1 MHz
23
28
pF
fT
transition frequency
IC = 100 mA; VCE = 10 V;
f = 100 MHz
100
200
MHz
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