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參數(shù)資料
| 型號(hào)： | 934056615118 |
| 廠(chǎng)商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 20.3 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 14/15頁(yè) |
| 文件大?。?/td> | 322K |
| 代理商： | 934056615118 |
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Philips Semiconductors
PHP20N06T; PHB20N06T
N-channel TrenchMOS transistor
Product specication
Rev. 01 — 22 February 2001
8 of 15
9397 750 07894
Philips Electronics N.V. 2001. All rights reserved.
VDS =25V
Tj =25 °C; ID =25A
Fig 13. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
VGS =0V
Fig 15. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
!==="'
0
5
10
15
20
25
024
68
10
VGS (V)
ID
(A)
Tj = 175
o
C
Tj = 25
o
C
!===#
0
2
4
6
8
10
0
5
10
15
QG (nC)
VGS
VDD = 44 V
VDD = 14 V
(V)
!===#
0
20
40
60
80
100
120
0
0.5
1.0
1.5
2.0
VSD (V)
IS
(A)
Tj = 25
o
C
Tj = 175
o
C
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