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參數(shù)資料
| 型號： | 934056620115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | PIN二極管 |
| 英文描述： | 70 V, SILICON, PIN DIODE |
| 封裝： | PLASTIC, SMD, URP, UMD2, SC-76, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | 934056620115 |
2002 Aug 06
2
Philips Semiconductors
Product specication
Silicon PIN diode
BAP70-03
FEATURES
High voltage, current controlled RF resistor for
attenuators
Low diode capacitance
Very low series inductance.
APPLICATIONS
RF attenuators
(SAT)TV
Car radio.
DESCRIPTION
Planar PIN diode in a SOD323 small SMD plastic
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
12
MAM406
Marking code: A9.
Fig.1 Simplified outline (SOD323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
50
V
IF
continuous forward current
100
mA
Ptot
total power dissipation
Ts =90 °C
500
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 50 mA
0.9
1.1
V
IR
reverse leakage current
VR =30V
20
nA
Cd
diode capacitance
VR = 0 V; f = 1 MHz
570
fF
VR = 1 V; f = 1 MHz
400
fF
VR = 5 V; f = 1 MHz
270
fF
VR = 20 V; f = 1 MHz
200
250
fF
rD
diode forward resistance
IF = 0.5 mA; f = 100 MHz
77
100
IF = 1 mA; f = 100 MHz
40
50
IF = 10 mA; f = 100 MHz
5.4
7
IF = 100 mA; f = 100 MHz
1.4
1.9
τ
L
charge carrier life time
when switched from IF =10mA to
IR = 6 mA; RL = 100 ;
measured at IR =3mA
1.25
s
LS
series inductance
IF = 100 mA; f = 100 MHz
1.5
nH
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